器件名称:
2SC3833
功能描述:
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
文件大小:
25.8KB 共1页
简 介:
2SC3833 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3833 500 400 10 12(Pulse24) 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1A VCB=10V, f=1MHz (Ta=25°C) 2SC3833 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ V MHz pF V Unit External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 A A V 19.9±0.3 4.0 a b 3.2±0.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.7 IB2 (A) –1.4 ton (s) 1.0max tstg (s) 3.0max tf (s) 0.5max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 12 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 12 (V C E =4V) 1000m 10 Collector Current I C (A) A 80 0m A 60 0m A 10 1 –55C (Case 25C (Cas 125 Collector Current I C (A) V B E (sat) 8 400m A Temp) 8 p) Tem 6 e Temp) as e 2 5 Temp ……
