器件名称:
2SC3851
功能描述:
Silicon NPN Epitaxial Planar Transistor(Audio and PPC High Voltage Power Supply, and General Purpose)
文件大小:
24KB 共1页
简 介:
2SC3851/3851A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) sAbsolute maximum ratings (Ta=25°C) Symbol 2SC3851 2SC3851A VCBO VCEO VEBO IC IB PC Tj Tstg 80 60 6 4 1 25(Tc=25°C) 150 –55 to +150 100 80 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=6V IC=25mA VCE=4V, IC=1A IC=2A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz Application : Audio and PPC High Voltage Power Supply, and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO VCB= 80 100max 60min 80min 40 to320 0.5max 15typ 60typ Conditions External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 2SC3851 2SC3851A 100max 100 Unit A A V V MHz pF 2.54 2.2±0.2 16.9±0.3 V 8.4±0.2 13.0min 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 12 RL () 6 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 200 IB2 (mA) –200 ton (s) 0.2typ tstg (s) 1typ tf (s) 0.3typ 3.9 B C E I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 4 V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) 4 (V C E =4V) 0m 60 m A 50mA IB =7 A Collector Current I C (A) 3 30mA Collector Current I C (A) 40mA 1.0 3 Tem emp ) se T (Ca 2 2 p) 20mA ±0.2 0.8±0.2 a b 3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. (Ca C 10mA I C =1 A 0 0 1 2 3 4 5 6 0 0.005 0.01 0.05 0.1 0.5 1 0 0 0.5 Base-Emittor Voltage V B……
