器件名称:
2SC3852
功能描述:
Silicon NPN Epitaxial Planar Transistor(Driver for Solenoid and Motor, Series Regulator and General Purpose)
文件大小:
23.95KB 共1页
简 介:
High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol 2SC3852 2SC3852A VCBO VCEO VEBO IC IB PC Tj Tstg 80 60 6 3 1 25(Tc=25°C) 150 –55 to +150 100 80 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB 2SC3852/3852A Application : Driver for Solenoid and Motor, Series Regulator and General Purpose (Ta=25°C) 2SC3852 2SC3852A Unit sElectrical Characteristics Symbol ICBO VCB= VEB=6V IC=25mA VCE=4V, IC=0.5A IC=2A, IB=50mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz 80 100max 60min 500min 0.5max 15typ 50typ Conditions External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 10max 100 80min A A V V MHz pF 2.54 2.2±0.2 16.9±0.3 V 8.4±0.2 13.0min 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL () 20 IC (A) 1.0 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 15 IB2 (mA) –30 ton (s) 0.8typ tstg (s) 3.0typ tf (s) 1.2typ 3.9 B C E I C – V CE Characteristics (Typical) 3 IB 2 =1 m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 1.0 I C – V BE Temperature Characteristics (Typical) (V C E =4V) 3 A 8mA Collector Current I C (A) 5mA 2 3mA 2mA 1.0 Collector Current I C (A) 2 p) em ±0.2 0.8±0.2 a b 3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. mp) e Te (Cas Cas 0.5mA 2A I C =1A 0 0.001 0 0 0 1 2 3 4 5 6 0.005 0.01 0.05 0.1 0.5 1 0 –30C 3A 25C 125 1mA C ( 1 0.5 1 (C……
