器件名称: 2SC3858
功能描述: Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)
文件大小: 24.84KB 共1页
简 介:2SC3858
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3858 200 200 6 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=8A IC=10A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz 100max 100max 200min
External Dimensions MT-200
36.4±0.3 24.4±0.2 2-3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2
2SC3858
Unit
A A
V
a b
50min 2.5max 20typ 300typ V MHz pF
20.0min
4.0max
2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1 IB2 (A) –1 ton (s) 0.5typ tstg (s) 1.8typ tf (s) 0.6typ
Weight : Approx 18.4g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
5A
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3
I C – V BE Temperature Characteristics (Typical)
17 15 (V CE =4V)
17 15
1.
1A
7
m 00
A
m 500
A
300m
Collector Current I C (A)
A
20 0m A
2
Collector Current I C (A)
10
100mA
10
p)
Tem
125
I B =20mA
10A 5A 0 0 1 2 3 0 0
0
0
1
2
3
4
–30C
25C
I C =15A
C
(Case
(Ca
5
50mA
5
se
1
1 Base-Emittor Voltage V B E (V)
Temp
)
2
Collector-Emitter Volt……