器件名称: 2SC3890
功能描述: Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
文件大小: 25.03KB 共1页
简 介:2SC3890
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3890 500 400 10 7(Pulse14) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 50typ
(Ta=25°C) 2SC3890 Unit
A
V V V MHz pF
13.0min 16.9±0.3 8.4±0.2
A
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 66 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.6 ton (s) 1max tstg (s) 3max tf (s) 0.5max
2.54
3.9 B C E
I C – V CE Characteristics (Typical)
7
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) (I C /I B =5)
I C – V BE Temperature Characteristics (Typical)
7 (V C E =4V)
6
800
mA
A 600m
6 Collector Current I C (A) V B E (sat) 1
–55C (Cas e Temp)
mp)
)
as e 2 5 Tem p) C
I B=
40 0m A
Collector Current I C (A)
300 mA
4
200 mA
Tem
p)
e Te 25C (Cas
125C (Case
4
) emp se T 25C (Ca
±0.2
0.8±0.2
a b
……
