器件名称:
2SC3927
功能描述:
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
文件大小:
25.5KB 共1页
简 介:
2SC3927 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3927 900 550 7 10(Pulse15) 5 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC3927 100max 100max 550min 10 to 28 0.5max 1.2max 6typ 105typ V V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit A A 19.9±0.3 V 4.0 a b 3.2±0.1 2 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 50 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.75 IB2 (A) –1.5 ton (s) 1max tstg (s) 5max tf (s) 0.5max Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 10 1. 2A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E(s a t) (V ) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 10 (V C E =4V) 1A 80 0m A 60 0m A Collector Current I C (A) –55C (C 25C (C ase Temp) p) 6 400m A ase Tem Collector Current I C (A) 8 1 V B E (sat) 8 6 p) mp 4 4 eT 200mA 125C (Case 25C Cas (C a I ……
