器件名称:
2SD1011
功能描述:
Silicon NPN epitaxial planer type For low-frequency amplification
文件大小:
42.99KB 共2页
简 介:
Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings 100 100 15 50 20 300 150 –55 ~ +150 Unit V V 1 2 3 0.45 –0.1 1.27 +0.2 13.5±0.5 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 5.1±0.2 s Features 0.45 –0.1 1.27 +0.2 2.3±0.2 V mA mA mW C C 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT NV * Conditions VCB = 60V, IE = 0 VCE = 60V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT min typ max 100 1 Unit nA A V V V 100 100 15 400 0.05 200 80 1200 0.2 VCE(sat) V MHz mV *h FE Rank classification R 400 ~ 800 S 600 ~ 1200 hFE Rank 1 Transistor PC — Ta 500 80 Ta=25C 70 400 50 25C Ta=75C 40……
