器件名称:
2SD1022
功能描述:
Darlington Transistor(5A NPN)
文件大小:
406.73KB 共8页
简 介:
SHINDENGEN Darlington Transistor 2SD1022 (T5L10) 5A NPN OUTLINE DIMENSIONS Case : TO-220 Unit : mm RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55`+150 Junction Temperature Tj +150 Collector to Base Voltage V 100 V CBO Collector to Emitter Voltage V 100 V CEO Emitter to Base Voltage V 7 V EBO Collector Current DCI 5 A C Collector Current Peak I 8 A CP Base Current DC I 0.5 A B Base Current Peak I 1 A BP Total Transistor Dissipation Tc = 25 P 30 W T Mounting Torque : 0.3Nmj TOR (Recommended torque0.5 Nm Electrical Characteristics (Tc=25) Item Symbol Conditions Ratings Unit Collector Cutoff Current I V = 100V Max 0.1 mA CBO CB I = 100V Max 0.1 CE CEOV Emitter Cutoff Current V = 7V I Max 5mA EBO EB DC Current Gain h V = 3V, = I 3A Min 1,500 CE C FE Max 30,000 Collector to Emitter Saturation V (sat) I = 3A Voltage Max 1.5 V C CE Base to Emitter Saturation V (sat) Voltage I = 3mA Max 2.0 V BE B Thermal Resistance jc Junction to case Max 4.17 /W Transition Frequency fT V = 10V, = 0.5A I TYP 20 MHz CE C Turn on Time ton Max 2 I = 5A C Storage Time ts I =B2 I = 5mA Max 5s B1 R = 5 L Fall Time tf V = 4V Max 3 BB2 2SD1022 hFE - I C 10000 50°C 100°C Tc = 150°C DC Current Gain hFE 1000 25°C VCE = 3V Pulse width = 300s 1 8 0 °C 25°C 100 55°C 0.1 Collector Current IC [A] 2SD1022 Saturation Voltage 3.2 3A 5A 8A 2.8 2.4 2 5A 3A 8A 1.6 1.2 0.8 0.4 3.2 IC = 0.5A 1A 2.8 2.4 2 1.6 IC = 0.5A 1A 1.2 Collector-Emit……
