器件名称:
2SD1060
功能描述:
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
文件大小:
134.65KB 共3页
简 介:
UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE(sat)=0.4V max/IC=3A, IB=0.3A 1 APPLICATIONS *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching. SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP PC Tj TSTG VALUE 60 50 6 5 9 1 150 -55 ~ +150 UNIT V V V A A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Gain bandwidth product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time SYMBOL ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO tON tstg tf TEST CONDITIONS VCB=40V,IE=0 VEB=4V,IC=0 VCE=2V, IC=1A VCE=2V, IC=3A, VCE =5V, IC =1A VCB =10V, f=1MHz IC =3A, IB =0.3A IC =1mA, IE =0 IC =1mA, RBE =∞ IC =0, IE =1mA See specified test circuit See specified test circuit See specified test circuit MIN. TYP. MAX. 0.1 0.1 360 UNIT mA mA 70 30 30 100 0.4 60 50 6 0.1 1.4 0.2 MHZ pF V V V V s s s UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R208-023,B ……
