器件名称:
2SD1126K
功能描述:
Silicon NPN Triple Diffused
文件大小:
33.42KB 共6页
简 介:
2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.5 k (Typ) 130 (Typ) 3 1 2 3 2SD1126(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID 1 Ratings 120 120 7 10 15 50 150 –55 to +150 10 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 — — 1000 — — — — — — — Typ — — — — — — — — — — 0.8 8.0 Max — — 100 10 2000 1.5 3.0 2.0 3.5 3.0 — — V V V V V s s Unit V V A A Test conditions I C = 25 mA, RBE = ∞ I E = 200 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 5 A*1 I C = 5 A, IB = 10 mA*1 I C = 10 A, IB = 0.1 A*1 I C = 5 A, IB = 10 mA*1 I C = 10 A, IB = 0.1 A*1 I D = 10 A*1 I C = 5 A, IB1 = –IB2 = 10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off 2 2SD1126(K) Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W)……
