器件名称:
2SD1135
功能描述:
Silicon NPN Triple Diffused
文件大小:
31.95KB 共5页
简 介:
2SD1135 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB859 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 100 80 5 4 8 40 150 –45 to +150 Unit V V V A A W °C °C 2SD1135 Electrical Characteristics (Ta = 25°C) Item Symbol Min 80 5 — 1 Typ — — — — — — — 10 40 Max — — 0.1 200 — 1.5 2 — — Unit V V mA Test conditions I C = 50 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 80 V, IE = 0 VCE = 5 V, IC = 1 A*2 VCE = 5 V, IC = 0.1 A*2 VCE = 5 V, IC = 1 A*2 I C = 2 A, IB = 0.2 A*2 VCE = 5 V, IC = 0.5 A*2 VCB = 20 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance VBE VCE(sat) fT Cob 60 35 — — — — V V MHz pF Notes: 1. The 2SD1135 is grouped by h FE1 as follows. 2. Pulse test. B 60 to 120 C 100 to 200 Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 5 Area of Safe Operation (10 V, 4 A) IC max (Continuous) D (33 V, 1.2 A) 2 (T C O C = per……
