器件名称:
2SD1160
功能描述:
Silicon NPN Epitaxial Type (PCT Process)
文件大小:
149.03KB 共5页
简 介:
2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications High DC current gain Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) Built-in free wheel diode Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Symbol VCBO VCEO VEBO IC ICP IFP PC Tj Tstg Rating 50 20 6 2 4 1 1 10 150 55 to 150 Unit V V V A A W °C °C Diode forward surge current (t = 1 s) Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C JEDEC JEITA ― ― TOSHIBA 2-7B1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.36 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE ≈ 800 EMITTER 1 2006-11-21 2SD1160 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collecto……
