器件名称:
2N4403T/B
功能描述:
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
文件大小:
197.49KB 共4页
简 介:
2N4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary (NPN) device: 2N4401 40V POWER 625mW PNP 3 COLLECTOR MECHANICAL DATA Case: TO-92 Terminals: Solderable per MIL-STD-202, Method 208 Approx Weight: 0.02 grams Marking: 4403 1 2 3 1 EMITTER 2 BASE TO-92 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector - Emitter Voltage Collector - Base Voltage Emitter – Base Voltage Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range VCE0 VCB0 VEB0 IC PTOT TJ, TSTG -40 -40 -5.0 -600 625 -55 to 150 V V V mA mW ℃ THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Thermal Resistance , Junction to Ambient (Note 1) RθJ A 200 ℃/W Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. using minimum recommended pad. 2N4403 ELECTRICAL CHARACTERISTICS (TJ = 25C, unless otherwise noted) PARAMETER SYMBOL Test Condition MIN. TYP. MAX. UNIT Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current V(BR)CE0 IC=-1.0mA, IB=0 V(BR)CB0 IC=-100uA, IE=0 V(BR)EB0 IE=-100uA, IC=0 IBEV ICEX VCE=-35V, VEB=-0.4V VCE=-35V, VEB=-0.4V IC=-0.1mA, VCE=-1.0V IC=-1.0mA, VCE=-1.0V -40 -40 -5.0 30 60 100 100 20 -0.75 200 - - -100 -100 300 -0.4 -0.75 -0.95 -1.3 8.5 30 15 20 225 30 V V V nA nA DC Current Gain hFE ……
