器件名称:
2SD1209K
功能描述:
Silicon NPN Epitaxial, Darlington
文件大小:
156.99KB 共6页
简 介:
2SD1209(K) Silicon NPN Epitaxial, Darlington REJ03G0783-0200 (Previous ADE-208-1143) Rev.2.00 Aug.10.2005 Application Low frequency power amplifier Complementary pair with 2SA1193(K) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 2 1. Emitter 2. Collector 3. Base 3 1 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 60 60 7 1 2 0.9 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SD1209(K) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test Symbol V(BR)CBO ICEO IEBO hFE VCE(sat) VBE(sat) Min 60 — — 4000 — — Typ — — — — — — Max — 100 100 — 1.5 2.0 Unit V A A V V Test conditions IC = 0.1 mA, IE = 0 VCE = 60 V, RBE = ∞ VEB = 7 V, IC = 0 VCE = 3 V, IC = 0.5 A*1 IC = 500 mA, IB = 0.5 mA*1 IC = 500 mA, IB = 0.5 mA*1 Rev.2.00 Aug 10, 2005 page 2 of 5 2SD1209(K) Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (W) 1.2 10 Area of Safe Operation Collector Current IC (A) 5 iC(peak) Ta = 25°C 1 Shot Pulse 0.8 2 1.0 0.5 PW =1 10 0.4 ms ms 0.2 0.1 1.……
