器件名称:
2N5655_06
功能描述:
Plastic NPN Silicon High−Voltage Power Transistor
文件大小:
80.51KB 共5页
简 介:
2N5655, 2N5657 Plastic NPN Silicon HighVoltage Power Transistor These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays. Features http://onsemi.com Excellent DC Current Gain CurrentGain Bandwidth Product hFE = 30250 @ IC = 100 mAdc fT = 10 MHz (Min) @ IC = 50 mAdc PbFree Packages are Available* 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250350 VOLTS, 20 WATTS MAXIMUM RATINGS (Note 1) Rating Symbol VCEO VCB VEB IC IB 2N5655 250 275 2N5657 350 375 Unit Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Base Current 6.0 0.5 1.0 1.0 Continuous Peak Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 20 0.16 W W/°C °C/W TJ, Tstg – 65 to + 150 TO225AA CASE 7709 STYLE 1 MARKING DIAGRAM YWW 2 N565xG THERMAL CHARACTERISTICS Characteristic Symbol qJC Max Unit Thermal Resistance, JunctiontoCase 6.25 °C/W Y WW 2N565x G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC registered data. = Year = Work Week = Device Code x = 5 or 7 = PbFree Package ORDERING……
