器件名称:
2N5657
功能描述:
POWER TRANSISTORS NPN SILICON
文件大小:
176.71KB 共4页
简 介:
ON Semiconductor ) Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays. 2N5655 2N5657 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250–350 VOLTS 20 WATTS Excellent DC Current Gain – fT = 10 MHz (Min) @ IC = 50 mAdc MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N5655 250 275 2N5657 350 375 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 6.0 0.5 1.0 Collector Current – Continuous Peak Base Current 0.25 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 20 0.16 Watts W/_C _C TJ, Tstg –65 to +150 Current–Gain – Bandwidth Product – hFE = 30–250 @ IC = 100 mAdc 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS Characteristic Symbol θJC Max Unit Thermal Resistance, Junction to Case 6.25 _C/W (1) Indicates JEDEC Registered Data. 40 PD, POWER DISSIPATION (WATTS) 30 50 mH 20 Hg RELAY + X 200 TO SCOPE 6.0 V Y 300 50 V + - 10 0 1.0 25 50 75 100 TC, CASE TEMPERATURE (°C) 125 150 Figure 1. Power Derating Figure 2. Sustaining Voltage Test Circuit Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed. Semiconductor Components Industries, LLC, 2002 1 April, ……
