器件名称:
2N5883G
功能描述:
Complementary Silicon High−Power Transistors
文件大小:
94.94KB 共6页
简 介:
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon HighPower Transistors Complementary silicon highpower transistors are designed for generalpurpose power amplifier and switching applications. Features http://onsemi.com Low CollectorEmitter Saturation Voltage Low Leakage Current VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product ft = 4.0 MHz (min) at IC = 1.0 Adc PbFree Packages are Available* 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS, 200 WATTS MAXIMUM RATINGS (Note 1) Rating Symbol VCEO Value 60 80 60 80 Unit Vdc CollectorEmitter Voltage 2N5883, 2N5885 2N5884, 2N5886 CollectorBase Voltage 2N5883, 2N5885 2N5884, 2N5886 VCB Vdc EmitterBase Voltage Collector Current Continuous Peak Base Current VEB IC 5.0 25 50 Vdc Adc IB 7.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 200 1.15 W W/°C °C TJ, Tstg – 65 to + 200 TO204AA (TO3) CASE 107 STYLE 1 MARKING DIAGRAM 2N588xG AYYWW MEX 2N588x G A YY WW MEX THERMAL CHARACTERISTICS Characteristic Symbol qJC Max Unit = Device Code x = 3, 4, 5, or 6 = PbFree Package = Assembly Location = Year = Work Week = Country of Origin Thermal Resistance, JunctiontoCase 0.875 °C/W Stresses exceeding Maxi……
