器件名称:
2N6036_00
功能描述:
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
文件大小:
246.06KB 共6页
简 介:
2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s 2N6036 IS A STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIER s DESCRIPTION The 2N6036 and 2N6039 are complementary silicon power Darlington transistors mounted in Jedec SOT-32 plastic package. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 7 K R2 Typ. = 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter PNP NPN V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 2N6036 2N6039 80 80 5 4 8 0.1 40 -65 to 150 150 Unit V V V A A A W o C o C For PNP types voltage and current values are negative. December 2000 1/6 2N6036/2N6039 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 83.3 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CBO Parameter Collector Cut-off Current (V BE = -1.5V) Test Conditions V CE = rated V CEO V CE = rated V CEO T c = 125 o C V CE = rated V CBO V CE = rated V CEO V EB = 5 V I C = 100 mA IC = 2 A IC = 4 A IC = 4 A IC IC IC IC = = = = IC = 2A 0.5 A 2A 4A 0.75 A I B = 8 mA I B = 40 mA I……
