器件名称:
2N6036G
功能描述:
Plastic Darlington Complementary Silicon Power Transistors
文件大小:
85.81KB 共6页
简 介:
(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and lowspeed switching applications. Features http://onsemi.com ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 4.0 AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40, 60, 80 VOLTS, 40 WATTS Epoxy Meets UL 94 V0 @ 0.125 in PbFree Packages are Available* MAXIMUM RATINGS Rating CollectorEmitter Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 2N6034 2N6035, 2N6038 2N6036, 2N6039 Symbol VCEO Value 40 60 80 40 60 80 5.0 4.0 8.0 100 40 320 1.5 12 – 65 to + 150 Unit Vdc 3 2 1 TO225AA CASE 77 STYLE 1 CollectorBase Voltage VCBO Vdc MARKING DIAGRAM EmitterBase Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Continuous Peak VEBO IC IB PD PD TJ, Tstg Vdc Adc Apk mAdc W mW/°C W mW/°C °C Y WW 2N603x G YWW 2 N603xG = Year = Work Week = Device Code x = 4, 5, 6, 8, 9 = PbFree Package THERMAL CHARACTERISTICS Characteristic Thermal Resistance, JunctiontoCase Thermal Resistance, JunctiontoAmbient Symbol RqJC RqJA Max 3.12 83.3 Unit °C/W °C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding Ma……
