器件名称:
2SD1249
功能描述:
Silicon NPN triple diffusion planar type(For low-freauency power amplification)
文件大小:
53.8KB 共2页
简 介:
Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type For low-freauency power amplification 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q 10.5min. High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings 350 400 250 300 5 1.5 0.75 35 1.3 150 –55 to +150 Unit V 1.5max. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1249 2SD1249A 2SD1249 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 emitter voltage 2SD1249A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 10.0±0.3 6.0±0.3 V A A W 1.5–0.4 2.0 3.0–0.2 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 C C 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1249 2SD1249A 2SD1249 2SD1249A 2SD1249 2SD1249A 1:Base 2:Collector 3:Emitter N Type Package (DS) (TC=25C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.3A V……
