器件名称:
2N6043
功能描述:
Plastic Medium−Power Complementary Silicon Transistors
文件大小:
94.72KB 共6页
简 介:
PNP 2N6040, 2N6042, NPN 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic MediumPower Complementary Silicon Transistors Plastic mediumpower complementary silicon transistors are designed for generalpurpose amplifier and lowspeed switching applications. Features http://onsemi.com High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 60 Vdc (Min) 2N6040, 2N6043 = 100 Vdc (Min) 2N6042, 2N6045 Low CollectorEmitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc 2N6042, 2N6045 Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors Epoxy Meets UL 94 V0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V PbFree Packages are Available* DARLINGTON, 8 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60 100 VOLTS, 75 WATTS 1 MAXIMUM RATINGS (Note 1) Rating CollectorEmitter Voltage Symbol VCEO Value 60 Unit Vdc 2N6040 2N6043 2N6042 2N6045 100 60 CollectorBase Voltage 2N6040 2N6043 2N6042 2N6045 VCB Vdc 100 5.0 8.0 16 EmitterBase Voltage Collector Current Base Current VEB IC IB Vdc Adc Continuous Peak 120 mAdc W W/°C °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 75 0.60 TJ, Tstg –65 to +150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Fun……
