器件名称:
2SD1250
功能描述:
Silicon PNP epitaxial planar type(For power amplification)
文件大小:
49.14KB 共2页
简 介:
Power Transistors 2SB928, 2SB928A Silicon PNP epitaxial planar type For power amplification For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 10.0±0.3 1.5±0.1 10.5min. q q q High collector to emitter VCEO High collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings –200 –150 –180 –6 –3 –2 30 1.3 150 –55 to +150 Unit V 2.0 s Features 1.5max. 1.1max. 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB928 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 1.5–0.4 Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 2.0 3.0–0.2 A A 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 W C C 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB928 2SB928A (TC=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1* hFE2 VBE VCE(sat) fT Conditions VCB = –200V, IE = 0 VEB = –4V, IC = 0 IC = –500A, IE = 0 IC = –5mA, IB = 0 IE = –500A, IC = 0 VCE = –10V, IC = –150mA VCE = –10V, IC = –400mA VCE = –10V……
