器件名称:
2N6661
功能描述:
N-Channel Enhancement-Mode Vertical DMOS FETs
文件大小:
395.58KB 共3页
简 介:
2N6660/2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-Channel devices General Description The Supertex 2N6660 and 2N6661 are enhancementmode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefcient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Motor controls Converters Ampliers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Device 2N6660 2N6661 Package TO-39 TO-39 BVDSS/BVDGS (V) 60 90 RDS(ON) (max) (Ω) 3.0 4.0 ID(ON) (min) (A) 1.5 1.5 Absolute Maximum Ratings Parameter Drain to source voltage Drain to gate voltage Gate to source voltage Ope……
