器件名称:
2n917
功能描述:
NPN SILICON PLANAR TRANSISTOR
文件大小:
136.25KB 共4页
简 介:
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N917 TO-72 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - Continuous Power Dissipation @ TA=25C Derate Above 25C Power Dissipation @ TC=25C Derate Above 25C Operating & Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC PD PD Tj, Tstg VALUE 30 15 3 50 200 1.14 300 1.71 -65 to +200 UNIT V V V mA mW mW/C mW mW/C C ELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage VCEO(SUS) IC=3mA, IB=0 VCBO IC=1A, IE=0 Collector Base Voltage VEBO IE=10A, IC=0 Emitter Base Voltage Collector Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage ICBO hFE VBE(sat) VCB=15V, IE=0 VCB=15V, IE=0, TA=150C IC=3mA, VCE=1V IC=10mA, IB=1mA MIN 15 30 3.0 20 - TYP - MAX 1.0 1.0 200 0.4 1.0 UNIT V V V nA A V V VCE(sat) IC=10mA, IB=1mA Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR TRANSISTOR 2N917 TO-72 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise ) DESCRIPTION Small-Signal Characteristics Current - Gain - Bandwidth Product OutPut Capacitance InPut Capacitance Noise Figure SYMBOL TEST CONDITION MIN TYP MAX UNIT f T(1) Cobo IC=4mA,VCE=10V,f=100MHz VCB=10V, IE=0, f=1……
