器件名称:
2SD1376
功能描述:
Silicon NPN Epitaxial
文件大小:
33.83KB 共6页
简 介:
2SD1376(K) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base ID 6 k (Typ) 0.5 k (Typ) 1 1 2 3 2SD1376(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) PC * Tj Tstg ID* 1 1 Rating 120 120 7 1.5 3.0 20 150 –55 to +150 1.5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 — — 2000 — — — — — — — Typ — — — — — — — — — — 0.5 2.0 Max — — 100 10 30000 1.5 2.0 2.0 2.5 3.0 — — V V V V V s s Unit V V A A Test conditions I C = 10 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1 I C = 1 A, IB1 = –IB2 = 1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. hFE VCE (sat)1 VCE (sat)2 VBE (sat)1 VBE (sat)2 VD Ton Toff 2 2SD1376(K) Maximum Collector Dissipati……
