器件名称:
74HCT2G08DP
功能描述:
Dual 2-input AND gate
文件大小:
85.24KB 共16页
简 介:
INTEGRATED CIRCUITS DATA SHEET 74HC2G08; 74HCT2G08 Dual 2-input AND gate Product specication Supersedes data of 2003 Feb 03 2003 Oct 22 Philips Semiconductors Product specication Dual 2-input AND gate FEATURES Wide supply voltage range from 2.0 to 6.0 V Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays Very small 8 pins package Output capability is standard ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. Specified from 40 to +85 °C and 40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. DESCRIPTION 74HC2G08; 74HCT2G08 The 74HC2G/HCT2G08 is a high-speed Si-gate CMOS device. The 74HC2G/HCT2G08 provides the 2-input AND function. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For 74HC2G08 the condition is VI = GND to VCC. For 74HCT2G08 the condition is VI = GND to VCC 1.5 V. PARAMETER propagation delay nA, nB to nY input capacitance power dissipation capacitance per gate notes 1 and 2 CONDITIONS HC2G08 CL = 15 pF; VCC = 5 V 9 1.5 10 HCT2G08 14 1.5 10 ns pF pF UNIT 2003 Oct 22 2 Philips Semiconductors Product specication Dual 2-input ……
