器件名称:
2SD2560
功能描述:
Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)
文件大小:
24.24KB 共1页
简 介:
Equivalent circuit C Darlington 2SD2560 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=–2A VCB=10V, f=1MHz 2SD2560 100max 100max 150min 5000min 2.5max 3.0max 70typ 120typ V V MHz pF 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 B (7 0 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2560 150 150 5 15 1 130(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit 5.0±0.2 2.0 1.8 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 4.8±0.2 2.0±0.1 A A 19.9±0.3 V 4.0 a b 3.2±0.1 hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 10 IB2 (mA) –10 ton (s) 0.8typ tstg (s) 4.0typ tf (s) 1.2typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 15 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 15 (V C E =4V) 10mA 50mA 3mA 2m A 1.5 mA 1. 0m A Collector Current I C (A) 10 0.5mA 2 Collector Current I C (A) 0. 8m A 10 emp mp) e Te (Cas 25C –30C I C =.15A I C =.10A 1 I C =.5A ) eT ……
