器件名称:
2SD2589
功能描述:
Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)
文件大小:
22.04KB 共1页
简 介:
Darlington 2SD2589 Application : Audio, Series Regulator and General Purpose (Ta=25°C) 2SD2589 100max 100max 110min 5000min 2.5max 3.0max 60typ 55typ V V MHz pF 12.0min 4.0max 1.35 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2589 110 110 5 6 1 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions FM-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 Unit A A 16.0±0.7 V 8.8±0.2 a b 3.75±0.2 hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0.65 +0.2 -0.1 2.5 B C E 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL () 6 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) –5 ton (s) 0.8typ tstg (s) 6.2typ tf (s) 1.1typ Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) A 1m 5mA V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) 3 I C – V BE Temperature Characteristics (Typical) 6 (VCE=4V) 6 0. 5m A 0. 4m A 0.3 mA Collector Current I C (A) 4 0.2mA Collector Current I C (A) 2 4 I C =5A mp) e Te ) 125C I C =3A I B =0.1mA 0 0 2 4 6 0 0.1 0.5 1 5 10 50 100 0 0 1 –30C 25C (Case (Case 2 1 2 (Cas Temp Temp ……
