EEPW首页| 器件索引| 厂商列表| IC替换| 微缩略语| 电路图查询
器件查询:
400万器件资料库等您来搜!
首页>PHILIPS> 74HCT1G126GW

74HCT1G126GW

器件名称: 74HCT1G126GW
功能描述: Bus buffer/line driver; 3-state
文件大小: 78.2KB 共16页
生产厂商: PHILIPS
下  载: 在线浏览点击下载
简  介: INTEGRATED CIRCUITS DATA SHEET 74HC1G126; 74HCT1G126 Bus buffer/line driver; 3-state Product specication Supersedes data of 2001 Apr 06 2002 May 15 Philips Semiconductors Product specication Bus buffer/line driver; 3-state FEATURES Wide operating voltage from 2.0 to 6.0 V Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays Very small 5 pins package Output capability: bus driver. 74HC1G126; 74HCT1G126 DESCRIPTION The 74HC1G/HCT1G126 is a highspeed Si-gate CMOS device. The 74HC1G/HCT1G126 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A LOW at pin OE causes the output as assume a high-impedance OFF-state. The bus driver output currents are equal compared to the 74HC/HCT126. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = rf ≤ 6.0 ns. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. For HC1G the conditions is VI = GND to VCC. For HCT1G the conditions is VI = GND to VCC 1.5 V. FUNCTION TABLE See note 1. INPUTS OE H H L Note 1. H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. A L H X OUTPUT Y L H Z PARAMETER propagation delay A to Y input capacitance powe……
相关电子器件
器件名 功能描述 生产厂商
74HCT1G126GW Bus buffer/line driver; 3-state PHILIPS
74HCT1G126GW Bus buffer/line driver; 3-state PHILIPS
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2