器件名称:
2SJ0163
功能描述:
For General Switching
文件大小:
47.34KB 共3页
简 介:
Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 s Features q Low ON-resistance q Low-noise characteristics 1 2 (0.95) (0.95) Unit: mm 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65 20 10 150 150 55 to +150 Unit V mA mA mW °C °C 1: Source 2: Drain 3: Gate 10 1.9±0.1 2.90+0.20 –0.05 1.1+0.2 –0.1 (0.65) 0 to 0.1 1.1+0.3 –0.1 JEDEC: TO-236 EIAJ: SC-59 Mini3-G1 Package Marking Symbol (Example): 4M s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Conditions VDS = 10 V, VGS = 0 VGS = 30 V, VDS = 0 IG = 10 A, VDS = 0 VDS = 10 V, ID = 10 A VDS = 10 V, ID = 1 mA, f = 1 kHz VDS = 10 mV, VGS = 0 VDS = 10 V, VGS = 0, f = 1 MHz 1.8 65 1.5 2.5 300 12 4 3.5 min 0.2 typ max 6 10 Unit mA nA V V mS pF pF Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss * IDSS rank classification Runk IDSS (mA) O 0.2 to 1 4MO P 0.6 to 1.5 4MP Q 1 to 3 4MQ R 2.5 to 6 4MR Marking Symbol Note) The part number in the parenthesis shows conv……
