器件名称:
2SJ181S
功能描述:
Silicon P Channel MOS FET
文件大小:
87.38KB 共8页
简 介:
2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous: ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 7 2SJ181(L), 2SJ181(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value –600 ±15 –0.5 –1.0 –0.5 20 150 –55 to +150 Unit V V A A A W °C °C Pch Tch Note 2 Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (B……
