器件名称:
FDN302P
功能描述:
P-Channel 2.5V Specified PowerTrench MOSFET
文件大小:
103.44KB 共5页
简 介:
FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features –20 V, –2.4 A. RDS(ON) = 0.055 @ VGS = –4.5 V RDS(ON) = 0.080 @ VGS = –2.5 V Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint Applications Power management Load switch Battery protection D D S G S SuperSOT -3 TM G TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation Parameter Ratings –20 ±12 (Note 1a) Units V V A W °C –2.4 –10 0.5 0.46 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range –55 to +150 250 75 Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) °C/W °C/W Package Marking and Ordering Information Device Marking 302 Device FDN302P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2000 Fairchild Semiconductor Corporation FDN302P Rev C(W) FDN302P Electrical Characteristics Symbol BVDSS BVDSS ===TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Par……
