器件名称:
FDS6375
功能描述:
Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
文件大小:
194.99KB 共8页
简 介:
FDS6375 February 1999 FDS6375 Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features -8.0 A, -20 V. RDS(on) = 0.024 @ VGS = -4.5 V RDS(on) = 0.032 @ VGS = -2.5 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications DC/DC converter Load switch Battery Protection D D D D 5 6 7 4 3 2 1 SO-8 S S S G 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -20 (Note 1a) Units V V A W ±8 -8.0 -50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Outlines and Ordering Information Device Marking FDS6375 Device FDS6375 Reel Size 13’’ Tape Width 12mm Quantity 2500 unit……
