器件名称:
FDS6575_01
功能描述:
P-Channel 2.5V Specified PowerTrench?MOSFET
文件大小:
68.7KB 共5页
简 介:
FDS6575 September 2001 FDS6575 P-Channel 2.5V Specified PowerTrench MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wi th a wide range of gate drive voltage (2.5V – 8V). Features –10 A, –20 V. RDS(ON) = 13 m @ V GS = –4.5 V RDS(ON) = 17 m @ V GS = –2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) High current and power handling capability Applications Power management Load switch Battery protection D D SO-8 DD DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –20 ±8 (Note 1a) Units V V A W –10 –50 2.5 1.5 1.2 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS6575 Device FDS6575 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDS6575 Rev F(W) FDS6575 Electrical Characteristics……
