器件名称:
FDS6576_06
功能描述:
P-Channel 2.5V Specified PowerTrench MOSFET
文件大小:
451.02KB 共5页
简 介:
FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET December 2006 tm FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features –11 A, –20 V. RDS(ON) = 0.014 :@ VGS = –4.5 V RDS(ON) = 0.020 :@ VGS = –2.5 V Extended VGSS range (r12V) for battery applications. Low gate charge (43nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications Load switch Battery protection Power management High power and current handling capability. RoHS Compliant. D 5 6 4 3 2 1 D D D SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings –20 r 12 –11 –50 2.5 1.2 1.0 –55 to +150 Units V V A W TJ, TSTG Operating and Storage Junction Temperature Range qC Thermal Characteristics RTJA RTJA RTJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 qC/W qC/W qC/W Package Marking and Ordering Information Device Marking FDS6576 Device FDS6576 Reel Size 13’’ Ta……
