器件名称:
FDS9933A
功能描述:
Dual N-Channel 2.5V Specified PowerTrench MOSFET
文件大小:
191.61KB 共8页
简 介:
FDS9933A November 1998 FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features -3.8 A, -20 V. RDS(on) = 0.075 Low gate charge ( 7nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(on). High power and current handling capability. @ VGS = -4.5 V RDS(on) = 0.105 @ VGS = -2.5 V. Applications Load switch DC/DC converter Motor drives D2 D1 D1 G2 D2 5 6 7 8 4 3 2 1 SO-8 pin 1 S1 G1 S2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter FDS9933A -20 (Note 1a) Units V V A W ±8 -3.8 -20 2.0 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1.0 0.9 -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS9933A Device FDS9933A Reel Size 13’’ Tape width 12mm Quantity 2500 units 1998 Fairchild Semiconductor Corporation FDS9933A Rev. C FDS9……
