器件名称:
FDS9933BZ
功能描述:
Dual P-Channel 2.5V Specified PowerTrench
文件大小:
292.18KB 共6页
简 介:
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46m Features Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0A Low gate charge (11nC typical). High performance trench technology for extremely low rDS(on). HBM ESD protection level >3kV (Note 3). RoHS Compliant tm General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Applications Battery Charging Load Switching D2 D2 D1 D1 G2 S2 G1 Pin 1 SO-8 S1 D1 8 D2 D2 D1 5 6 7 Q2 Q1 Q1 Q2 4 3 2 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings -20 ±12 -4.9 -30 1.6 0.9 -55 to +150 Units V V A W °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 40 78 °C/W Package Marking and Ordering Informa……
