器件名称:
APA3010P3BT
功能描述:
3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR
文件大小:
154.13KB 共4页
简 介:
3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR PRELIMINARY SPEC Part Number: APA3010P3BT Features z 3.0mmx1.0mm RIGHT ANGLE SMT LED, 2.0mm THICKNESS. z MECHANICALLY AND SPECTRALLY MATCHED TO THE INFRARED EMITTING LED LAMP. z BLUE TRANSPARENT LENS. z PACKAGE : 2000PCS / REEL. z MOISTURE SENSITIVITY LEVEL : LEVEL 3. z RoHS COMPLIANT. Description Made with NPN silicon phototansistor chips. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.15(0.006") unless otherwise noted. 3. Specifications are subject to change without notice. 4.The device has a single mounting surface. The device must be mounted according to the specifications. SPEC NO: DSAD1366 APPROVED: WYNEC REV NO: V.8 CHECKED: Allen Liu DATE: JAN/10/2008 DRAWN: R.Chen PAGE: 1 OF 4 ERP: 1203000588 Electrical / Optical Characteristics at TA=25°C Symbol VBR CEO VBR ECO VCE (SAT) I CEO TR TF I (ON) 2θ1/2 Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Collector-to-Emitter Saturation Voltage Collector Dark Current Rise Time (10％ to 90％ ) Fall Time (90％ to 10％ ) On State Collector Current Viewing Angle 0.2 15 15 0.8 110 Min. 30 5 0.8 100 Typ. Max. Units V V V nA us us mA deg Test Conditions IC=100uA Ee=0mW/c ㎡ IE=100uA Ee=0mW/c ㎡ IC=2mA Ee=20mW/c ㎡ VCE=10V Ee=0mW/c ㎡ VCE = 5V IC=1mA RL=1000 VCE = 5V Ee=1mW/c ㎡ λ=940nm Absolute Maximum Ratings at TA=25°C Parameter Collector-to-Emitter Voltage Emitter-to-Collector Voltage Power Dissipation at (o……
