器件名称:
AS5LC512K8F-12L/XT
功能描述:
512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT
文件大小:
285.43KB 共12页
简 介:
SRAM Austin Semiconductor, Inc. 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT AVAILABLE AS MILITARY SPECIFICATIONS MIL-STD-883 for Ceramic Extended Temperature Plastic (COTS) AS5LC512K8 PIN ASSIGNMENT (Top View) 36-Pin PSOJ (DJ) 36-Pin CLCC (EC) FEATURES Ultra High Speed Asynchronous Operation Fully Static, No Clocks Multiple center power and ground pins for improved noise immunity Easy memory expansion with CE\ and OE\ options All inputs and outputs are TTL-compatible Single +3.3V Power Supply +/- 0.3% Data Retention Functionality Testing Cost Efficient Plastic Packaging Extended Testing Over -55C to +125C for plastics 36-Pin Flat Pack (F) OPTIONS Timing 12ns access 15ns access 20ns access Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC) Package(s) Ceramic Flatpack Plastic SOJ (400 mils wide) Ceramic LCC 2V data retention/low power MARKING -12 -15 -20 XT IT F DJ EC L No. 307 No. 210 GENERAL DESCRIPTION The AS5LC512K8 is a 3.3V high speed SRAM. It offers flexibility in high-speed memory applications, with chip enable (CE\) and output enable (OE\) capabilities. These features can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. As a option, the device can be supplied offering a reduced power standby mode, allowing syst……
