器件名称:
AWT6112RM7P8
功能描述:
Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module
文件大小:
361.96KB 共12页
简 介:
AWT6112 Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES InGaP HBT Technology High Efficiency: 54% AMPS, 38% CDMA Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <5 A Optimized for a 50 System Low Profile Surface Mount Package: 1.56mm Max CDMA 1XRTT Compliant CDMA 1xEV-DO Compliant RoHS Compliant Package Option, 250 oC MSL-3 APPLICATIONS Single Mode CDMA Wireless Handsets Dual Mode AMPS/CDMA Wireless Handsets M7 Package 10 Pin 4 mm x 4 mm x 1.5 mm Surface Mount Module PRODUCT DESCRIPTION The AWT6112 is a high power, high efficiency amplifier module for dual mode AMPS/CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, serve to increase handset talk and standby time. The self contained 4 mm x 4 mm x 1.5 mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 system. GND at slug (pad) VREF 1 10 GND GND RFOUT GND VCC VMODE 2 GND 3 RFIN VCC 4 Bias Control 9 8 7 5 6 Figure 1: Block Diagram 06/2005 AWT6112 GND VREF 1 VMODE 2 GND 3 RFIN VCC 4 5 GND Figure 2: Pinout (X-ray Top View) 10 GND 9 8 7 6 GND RFOUT GND VCC Table 1: Pin Description PIN 1 2 3 4 5 6 7 8……
