器件名称:
FDS2734
功能描述:
N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm
文件大小:
395.23KB 共6页
简 介:
FDS2734 Single N-Channel UItraFET Trench MOSFET August 2006 FDS2734 N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117m Features Max rDS(on) =117m at VGS =10V, ID = 3.0A Max rDS(on) =126m at VGS = 6V, ID = 2.8A Fast switching speed High performance trench low rDS(on) technology for extremely tm General Descriptions This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC-DC conversion High power and current handling capability RoHS compliant D SO-8 D D D 5 6 4 3 2 1 Pin 1 S S S G 7 8 MOSFET Maximum Ratings Symbol VDS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C unless otherwise noted Parameter Ratings 250 ±20 (Note 1a) (Note 3) (Note 1a) (Note 1b) 3.0 50 12.5 2.5 1.0 -55 to 150 Units V V A mJ W o Single Pulse Avalanche Energy Power dissipation Power dissipation Operating and Storage Junction Temperature Range C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction- to -Ambient Thermal Resistance, Junction- to- Ambient Thermal Resistance, Junction -to- Case (Note 1a) (Note 1b) (Note 1) 50 125 25 oC/W Package Marking and Ordering Information Device Marking FDS2734 Device FDS2734 Package SO-8 Reel Size 13’’ Tape Width 12mm Quantity 2500 units 2006 Fairchild Semiconductor Corporation FDS2734……
