器件名称:
STP180N55F3
功能描述:
N-channel 55V - 3.2m
文件大小:
440.89KB 共14页
简 介:
STB180N55F3 STP180N55F3 N-channel 55V - 3.2m - 120A - D2PAK/TO-220 STripFET Power MOSFET Features Type STB180N55F3 STP180N55F3 VDSS 55V 55V RDS(on) 3.5m 3.8m ID 120A 120A (1) (1) Pw 330W 330W 3 1 2 3 1 1. Value limited by wire bonding ■ ■ Ultra low on-resistance 100% avalanche tested TO-220 D2PAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Application ■ Switching applications Order codes Part number STB180N55F3 STP180N55F3 Marking 180N55F3 180N55F3 Package D 2PAK Packaging Tape & reel Tube TO-220 June 2007 Rev 2 1/14 www.st.com 14 Contents STB180N55F3 - STP180N55F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . .……
