器件名称:
F49L004BA-90N
功能描述:
4 Mbit (512K x 8) 3V Only CMOS Flash Memory
文件大小:
353.62KB 共46页
简 介:
EFST preliminary F49L004UA / F49L004BA 4 Mbit (512K x 8) 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns ! Compatible with JEDEC standard - Pinout, packages and software commands compatible with single-power supply Flash ! Low power consumption - 20mA typical active current - 0.2uA typical standby current ! 10,000 minimum program/erase cycles ! Command register architecture - Byte programming (9us typical) - Sector Erase(sector structure: one 16 KB, two 8 KB, one 32 KB, and seven 64 KB) ! Auto Erase (chip & sector) and Auto Program - Any combination of sectors can be erased concurrently; Chip erase also provided. - Automatically program and verify data at specified address ! Erase Suspend/Erase Resume - Suspend or Resume erasing sectors to allow the read/program in another sector ! ! ! ! ! ! ! ! ! Ready/Busy (RY/ BY ) - RY/ BY output pin for detection of program or erase operation completion End of program or erase detection - Data polling - Toggle bits Hardware reset - Hardware pin( RESET ) resets the internal state machine to the read mode Sector Protection /Unprotection - Hardware Protect/Unprotect any combination of sectors from a program or erase operation. Low VCC Write inhibit is equal to or less than 2.0V Boot Sector Architecture - U = Upper Boot Sector - B = Bottom Boot Sector Packages available: - 40-pin TSOPI - 32-pin PLCC 2. ORDERING INFORMATION Part No F49L004UA-70T F49L004UA-70N F49L004BA-70T F49L004BA-7……
