器件名称: 5SDD0120C0400
功能描述: Rectifier Diode
文件大小: 89.95KB 共4页
简 介:VRRM IFAVM IFRMS IFSM VF0 rF
= = = = = =
400 V 11350 A 17800 A 85000 A 0.74 V 0.018 m
Rectifier Diode
5SDD 0120C0400
Doc. No. 5SYA1159-01 July 06
Optimized for high current rectifiers Very low on-state voltage Very low thermal resistance
Blocking
VRRM VRSM IRRM Repetitive peak reverse voltage Maximum peak reverse voltage Repetitive peak reverse current 400 V 450 V ≤ 50 mA Half sine wave, tP = 10 ms, f = 50 Hz Half sine wave, tP = 10 ms Tj = 170 °C VR = VRRM
Mechanical
FM a Mounting force min. max. Acceleration: Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 200 m/s2 0.22 kg 4 mm 4 mm 35 kN 40 kN
Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Semiconductors AG reserves the right to change specifications without notice.
5SDD 0120C0400
On-state
IFAVM IFRMS IFSM ∫I2dt Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current 11350 A 17800 A 85000 A 92500 A Max. surge current integral
2
Half sine wave, Tc = 85 °C tp = tp = 10 ms Before surge 8.3 ms Tj = 170 °C 10 ms After surge:
36100 kA s tp = 35700 kA2s tp =
8.3 ms VR ≈ 0V 8000 A Tj = 170 °C
VF min VF max VF0 rF
Minimum on-state voltage Maximum on-state voltage Threshold voltage Slope resistance
≥ ≤
0.83 V 0.88 V 0.74 V 0.018 m
IF =
Approximation for Tj = 170 °C IF = 8 - 18 kA
Thermal characteristics
Tj Tstg Rth(j-c) Operating junction temperature……
