器件名称:
5SHX19L6010
功能描述:
Reverse Conducting Integrated Gate-Commutated Thyristor
文件大小:
704.81KB 共13页
简 介:
VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 5500 1800 18×103 1.9 0.9 3300 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6010 Doc. No. 5SYA1229-02 Aug 07 High snubberless turn-off rating Optimized for medium frequency (<1 kHz) and low turn-off losses High reliability High electromagnetic immunity Simple control interface with status feedback AC or DC supply voltage Contact factory for series connection Blocking Maximum rated values Note 1 Parameter Repetitive peak off-state voltage Permanent DC voltage for 100 FIT failure rate of RC-GCT Characteristic values Symbol Conditions VDRM Gate Unit energized VDC-link Ambient cosmic radiation at sea level in open air. Gate Unit energized min typ max 5500 3300 Unit V V Parameter Repetitive peak off-state current Symbol Conditions IDRM VD = VDRM, Gate Unit energized min typ max 50 Unit mA Mechanical data (see Fig. 20, 21) Maximum rated values Note 1 Parameter Mounting force Characteristic values Symbol Conditions Fm Symbol Conditions Dp ± 0.1 mm H m Ds Da l h w Anode to Gate Anode to Gate ± 1.0 mm ± 1.0 mm ± 1.0 mm min 42 min 25.4 33 10 typ 44 typ 85 max 46 max 25.9 2.9 Unit kN Unit mm mm kg mm mm Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance Air strike distance Length Height Width IGCT 439 40 173 mm mm mm Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserv……
