器件名称:
5SHY35L4512
功能描述:
Asymmetric Integrated Gate- Commutated Thyristor
文件大小:
431.25KB 共9页
简 介:
VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 4000 35×103 1.15 0.21 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 June 07 Lowest on state voltage (2V @ 4000A) Optimized for low frequency (<100 Hz) and wide temperature range High reliability High electromagnetic immunity Simple control interface with status feedback AC or DC supply voltage Contact factory for series connection Blocking Maximum rated values 1) Parameter Symbol Conditions Rep. peak off-state voltage VDRM Gate Unit energized Permanent DC voltage for VDC-link 100 FIT failure rate of GCT Reverse voltage Characteristic values min typ max 4500 2800 17 10 Unit V V V V Unit mA Ambient cosmic radiation at sea level in open air. Gate Unit energized IGCT in off-state on-state VRRM Parameter Symbol Conditions Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized min typ max 50 Mechanical data (see Fig. 11, 12) 1) Maximum rated values Parameter Mounting force Characteristic values Symbol Conditions Fm Symbol Conditions Dp ± 0.1 mm H m Ds Da l h Anode to Gate Anode to Gate ± 1.0 mm ± 1.0 mm min 36 min 25.3 33 10 typ 40 typ 85 max 44 max 25.8 2.9 Unit kN Unit mm mm kg mm mm Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance Air strike distance Length Height 439 40 173 mm mm mm Width IGCT w ± 1.0 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerl……
