器件名称:
5SHY42L6530
功能描述:
Asymmetric Integrated Gate- Commutated Thyristor
文件大小:
767.1KB 共9页
简 介:
VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 6500 4200 26×103 2.0 0.54 4000 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6530 PRELIMINARY Doc. No. 5SYA1246-00 Aug. 07 High snubberless turn-off rating Wide temperature range High electromagnetic immunity Simple control interface with status feedback AC or DC supply voltage Option for series connection (contact factory) Blocking Maximum rated values 1) Parameter Symbol Conditions Rep. peak off-state voltage VDRM Gate Unit energized, Note 1 Permanent DC voltage for VDC-link 100 FIT failure rate of GCT Reverse voltage Characteristic values min typ max 6500 4000 17 Unit V V V Unit mA Ambient cosmic radiation at sea level in open air. Gate Unit energized VRRM min typ Parameter Symbol Conditions Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below -25 °C max 50 Mechanical data (see Fig. 11, 12) 1) Maximum rated values Parameter Mounting force Characteristic values Symbol Conditions Fm Symbol Conditions Dp ± 0.1 mm H m Ds Da l h Anode to Gate Anode to Gate ± 1.0 mm ± 1.0 mm min 36 min 25.3 33 10 typ 40 typ 85 max 44 max 25.8 2.9 Unit kN Unit mm mm kg mm mm Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance Air strike distance Length Height 439 40 173 mm mm mm Width IGCT w ± 1.0 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur……
