器件名称:
5SHZ08F6000
功能描述:
Reverse Blocking Integrated Gate-Commutated Thyristor
文件大小:
306KB 共8页
简 介:
VDRM VRRM ITGQM VT0 rT = = = = = 6000 6000 800 3.25 6.4 V V A V m Reverse Blocking Integrated Gate-Commutated Thyristor 5SHZ 08F6000 Doc. No. 5SYA1231-01 Sep. 01 Optimized for current source inverter (CSI) Fast response (tdon < 3 s, tdoff < 7 s) Precise timing (tdoff < 400 ns) Direct fiber optic control Status feedback Cosmic radiation withstand rating Very high EMI immunity Blocking VDRM VRRM IDRM IRRM VAC Repetitive peak off-state voltage Reverse repetitive peak off-state voltage Repetitive peak off-state current Reverse repetitive peak off-state current Max. AC voltage for 100 FIT failure rate (see Fig. 8) min. max. 12 kN 16 kN 47 mm 26 mm 1.00 kg ≥ ≥ 33 mm 13 mm 250 mm 44 mm 208 mm +0/-0.5 mm ±1.0 mm +0/-0.5 mm ±0.1 mm ±0.5 mm 6000 V 6000 V ≤ ≤ 50 mA 50 mA 3600 V VD = VDRM VR = VRRM 0 ≤ Tjop ≤ 125 °C. Ambient cosmic radiation at sea level in open air. Mechanical data Fm Dp H m DS Da l h w Mounting force Pole-piece diameter Housing thickness Weight IGCT Surface creepage distance Air strike distance Length IGCT Height IGCT Width IGCT ABB Semiconductors AG reserves the right to change specifications without notice. 5SHZ 08F6000 On-state ITAVM ITRMS VT VT0 rT (see Fig. 2) 290 A 450 A ≤ 8.40 V 3.25 V 6.4 m Half sine wave, TC = 85 °C IT IT = = 800 A 200 - 800 A Tj = 125 °C Max. average on-state current Max. RMS on-state current On-state voltage Threshold voltage Slope resistance Self commutation (VD > 0 V) Turn-on switching (see Fig. 3, 10, 11) di/dtcrit ……
