器件名称:
5SMX12K1701
功能描述:
IGBT-Die
文件大小:
83.68KB 共5页
简 介:
9&( ,& 9 $ ,*%7'LH 60; . 'LH VL]H [ PP Doc. No. 5SYA1619-01 July 03 /RZ ORVV WKLQ ,*%7 GLH +LJKO\ UXJJHG 637 GHVLJQ /DUJH IURQW ERQGDEOH DUHD 0D[LPXP UDWHG YDOXHV 3DUDPHWHU Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 6\PERO &RQGLWLRQV VCES IC ICM VGES tpsc Tvj VCC = 1300 V, VCEM ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C -40 Limited by Tvjmax -20 VGE = 0 V, Tvj ≥ 25 °C PLQ PD[ 1700 75 150 20 10 150 8QLW V A A V s °C 1) Maximum rated values indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH 60; . ,*%7 FKDUDFWHULVWLF YDOXHV 3DUDPHWHU Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 6\PERO &RQGLWLRQV V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 900 V, IC = 75 A, RG = 15 , VGE = ±15 V, Lσ = 160 nH, inductive load VCC = 900 V, IC = 75 A, RG = 15 , VGE = ±15 V, Lσ = 160 nH, inductive load VCC = 900 V, IC = 75 A, VGE = ±15 V, RG = 15 , Lσ = 160 nH, inductive load, FWD: 5SLX12G1700 VCC = 900 V, IC = 75 A, VGE = ±15 V, RG = 15 , Lσ = 160 nH, inductive load Tvj = 25 °C Tvj = 125 °C ……
