器件名称:
5SMX12M6500
功能描述:
IGBT-Die
文件大小:
61.51KB 共5页
简 介:
VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-01 Sep 05 Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 4400 V, VCEM ≤ 6500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C min max 6500 25 50 Unit V A A V s °C -20 20 10 -40 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12M6500 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 3600 V, IC = 25 A, RG = 82 , VGE = ±15 V, Lσ = 6800 nH, inductive load VCC = 3600 V, IC = 25 A, RG = 56 , VGE = ±15 V, Lσ = 6800 nH, inductive load VCC = 3600 V, IC = 25 A, VGE = ±15 V,……
